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dc.contributor.authorBai, S. N.en_US
dc.contributor.authorTsai, H. H.en_US
dc.contributor.authorTseng, T. Y.en_US
dc.date.accessioned2014-12-08T15:05:11Z-
dc.date.available2014-12-08T15:05:11Z-
dc.date.issued2007-12-03en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2007.06.096en_US
dc.identifier.urihttp://hdl.handle.net/11536/3719-
dc.description.abstractThe growth of one dimensional Al-doped ZnO nanowires on a silicon substrate with a ZnO seeding layer by using a low temperature hydrothermal method is demonstrated. The structural and optical characteristics of the solution-grown Al-doped ZnO nanowires were studied using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and cathodoluminescence (CL) measurements. The FE-SEM images show that the ZnO nanowires are hexagonal column shaped and stand perpendicularly on the silicon substrate. It is found in XRD patterns that the ZnO nanowires annealed at various temperatures are all wurtzite crystal structure and have (002) preferred orientation. As the annealing temperature changed, the intensity of (100) and (10 1) peaks reveals distinct change. The CL spectra show the as-grown ZnO nanowires display a weak and narrow UVemission centered at 376 nm. A strong and very broad green-yellow emission band with a center at 575 nm as well as a shoulder like orange-red emission band centering at 625 nm is also demonstrated. It is shown that the luminescence intensity centered at 376 nm increased, the shoulder like emission centered at 625 nm decreased but emission centered at 575 nm disappeared after thermal annealing treatment in oxygen atmosphere. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnO nanowireen_US
dc.subjectstructural propertiesen_US
dc.subjectoptical propertiesen_US
dc.subjecthydrothermal methoden_US
dc.titleStructural and optical properties of Al-doped ZnO nanowires synthesized by hydrothermal methoden_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2007.06.096en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume516en_US
dc.citation.issue2-4en_US
dc.citation.spage155en_US
dc.citation.epage158en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000252037500009-
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