OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LOONG, WA	en_US
dc.contributor.author	CHANG, HL	en_US
dc.date.accessioned	2014-12-08T15:05:12Z	-
dc.date.available	2014-12-08T15:05:12Z	-
dc.date.issued	1991-07-15	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3732	-
dc.description.abstract	The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300-degrees-C for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective.	en_US
dc.language.iso	en_US	en_US
dc.subject	GAAS	en_US
dc.subject	OXYGEN PLASMA	en_US
dc.subject	ANTIREFLECTION LAYER	en_US
dc.title	OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	7B	en_US
dc.citation.spage	L1319	en_US
dc.citation.epage	L1320	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:A1991FY67400031	-
dc.citation.woscount	4	-
顯示於類別：	期刊論文