完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | WU, JS | en_US |
dc.contributor.author | CHANG, KH | en_US |
dc.contributor.author | LEE, CP | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.contributor.author | LIU, DG | en_US |
dc.contributor.author | LIOU, DC | en_US |
dc.date.accessioned | 2014-12-08T15:05:12Z | - |
dc.date.available | 2014-12-08T15:05:12Z | - |
dc.date.issued | 1991-07-01 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.105532 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3738 | - |
dc.description.abstract | The photoluminescence (PL) of double-barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current-voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW. | en_US |
dc.language.iso | en_US | en_US |
dc.title | QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.105532 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 59 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 87 | en_US |
dc.citation.epage | 89 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1991FU34400030 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |