標題: SHALLOW DONOR IMPURITY STATES OF A SEMICONDUCTOR IN A UNIFORM MAGNETIC-FIELD
作者: DAI, CM
CHUU, DS
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 1-Jul-1991
摘要: The perturbative-variational method is used to study the hydrogen-like shallow donor impurity states of the isotropic semiconductor under a uniform magnetic field from a spherical symmetry approach. Using a magnetic field dependent parameter, which is added in the simple hydrogenic wave functions, the eigenvalues can be determined by optimizing the parameter. The results we obtained are in good agreement with the previous works up to gamma = 5 (e.g., 10(6) T for atoms) for the ground state. The extension to the transitional region by this method is considerably higher than other approaches.
URI: http://hdl.handle.net/11536/3747
ISSN: 0921-4526
期刊: PHYSICA B
Volume: 172
Issue: 4
起始頁: 445
結束頁: 451
Appears in Collections:Articles