ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS

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DC Field	Value	Language
dc.contributor.author	LOONG, WA	en_US
dc.contributor.author	YEN, MS	en_US
dc.date.accessioned	2014-12-08T15:05:13Z	-
dc.date.available	2014-12-08T15:05:13Z	-
dc.date.issued	1991-06-06	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3757	-
dc.description.abstract	Hydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.	en_US
dc.language.iso	en_US	en_US
dc.subject	ION IMPLANTATION	en_US
dc.subject	PLASMAS	en_US
dc.title	ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1079	en_US
dc.citation.epage	1081	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:A1991FR44000043	-
dc.citation.woscount	0	-
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