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dc.contributor.authorCHANG, CYen_US
dc.contributor.authorHONG, JWen_US
dc.contributor.authorFANG, YKen_US
dc.date.accessioned2014-12-08T15:05:14Z-
dc.date.available2014-12-08T15:05:14Z-
dc.date.issued1991-06-01en_US
dc.identifier.issn0267-3932en_US
dc.identifier.urihttp://hdl.handle.net/11536/3771-
dc.description.abstractThe device structures, operation principles, optoelectronic characteristics, performance comparisons, and possible applications for various a-Si:H/a-SiC:H phototransistors and avalanche photodiodes are reviewed. Although these devices are made of amorphous semiconductors, its majority-carrier transport properties can tactfully avoid gap-state and defect related minority-carrier transport problems, and obtain good performances. Also, each of these devices has the distinct advantage of meeting the requirements of different practical applications. The unique and distinct advantages of these a-Si:H/a-SiC:H devices are first, a variety of peak response wavelengths are achievable by changing the composition or the well-to-barrier widths of the superlattice, secondly, a large-area-detector image sensor can be made on a glass substrate; and thirdly, the low-temperature of the amorphous films (approximately 250-degrees-C) possesses a very abrupt composition change and a doping profile, which are impossible in the single-crystalline semiconductors.en_US
dc.language.isoen_USen_US
dc.subjectSEMICONDUCTOR DEVICES AND MATERIALSen_US
dc.subjectDIODESen_US
dc.subjectTRANSISTORSen_US
dc.titleAMORPHOUS SI/SIC PHOTOTRANSISTORS AND AVALANCHE PHOTODIODESen_US
dc.typeArticleen_US
dc.identifier.journalIEE PROCEEDINGS-J OPTOELECTRONICSen_US
dc.citation.volume138en_US
dc.citation.issue3en_US
dc.citation.spage226en_US
dc.citation.epage234en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:A1991FQ47600009-
dc.citation.woscount7-
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