標題: | 新型可噴塗性高分子閘極絕緣層於有機薄膜 The Study of Organic Thin Film Transistors with Novel Ink-jet Printable Polymeric Gate Insulators |
作者: | 蔡韻竹 Yan-Chu Tsai 謝漢萍 Han-Ping D. Shieh |
關鍵字: | 有機薄膜電晶體;高分子閘極絕緣層;organic thin film transistors;polymeric gate insulators |
公開日期: | 2007 |
摘要: | 本論文著眼於利用噴印技術於大面積基板上是降低成本的有效製程。本論文提出了一種可噴塗印刷式的高分子閘極絕緣層,使用高介電疏水性材料取代傳統的聚合物閘極絕緣層,實現可噴塗印刷式高分子閘極絕緣層的有機薄膜電晶體。從旋轉塗佈製備之元件結果得知,用可噴塗印刷式高分子介電質作為閘極絕緣層的有機薄膜電晶體元件其遷移率可達0.10 cm2/Vs,電流開關比可達大約為十萬倍數等級並且相當穩定且無磁滯現象。其中的改善層可減低一般絕緣材料的強極化效應並將啟動電壓降至0伏特,甚至將元件的遷移率提升到0.70 cm¬2/Vs。 The use of organic materials to build electronics is most attractive for low cost devices fabricated by printing techniques on large area, flexible substrates. Novel printable polymeric gate insulators were proposed and developed in this thesis. Those insulators were synthesized with high dielectric constant and strong hydrophobic ability to replace commercial polymeric gate insulators. The bottom contact structures of OTFTs with novel printable insulators were demonstrated. Moreover, the printable potential was fulfilled in demonstrating OTFTs by ink-jet printing technology with printed insulator layer. From the experimental results, the OTFT with printable polymeric gate insulator presented mobility of 0.10 cm2/Vs and on/off current ratio of five orders of magnitude with stable and no hysteresis performances. Considering the strong dipole effect of novel insulator materials, the improved layer can reduce the effect and the turn-on voltage shift to zero voltage. Even more, the mobility of improved device was 0.70 cm¬2/Vs. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009498502 http://hdl.handle.net/11536/38035 |
Appears in Collections: | Thesis |