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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorCHANG, HWen_US
dc.date.accessioned2014-12-08T15:05:16Z-
dc.date.available2014-12-08T15:05:16Z-
dc.date.issued1991-05-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11536/3803-
dc.description.abstractPoly(butene-1 sulfone) (PBS), a sensitive e-beam and X-ray resist, is inert to UV light. We found that the addition of a small amount of photoacid, triphenylsulfonium hexafluoroarsenate (TPSHFA), to PBS can catalyze its main chain scission via C-S bond cleavage by 254 nm deep UV exposure and concurrent baking at 80-degrees-C. Therefore, PBS can be used as a deep UV positive resist. The chemistry and resist characteristics of the PBS + TPSHFA system are discussed.en_US
dc.language.isoen_USen_US
dc.subjectPOLY(BUTENE-1 SULFONE)en_US
dc.subjectTRIPHENYLSULFONIUM HEXAFLUOROARSENATEen_US
dc.subjectPOSITIVE RESISTen_US
dc.titlePHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESISTen_US
dc.typeArticleen_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume14en_US
dc.citation.issue2en_US
dc.citation.spage101en_US
dc.citation.epage108en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1991FX01300003-
dc.citation.woscount0-
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