完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | LOONG, WA | en_US |
dc.contributor.author | CHANG, HW | en_US |
dc.date.accessioned | 2014-12-08T15:05:16Z | - |
dc.date.available | 2014-12-08T15:05:16Z | - |
dc.date.issued | 1991-05-01 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3803 | - |
dc.description.abstract | Poly(butene-1 sulfone) (PBS), a sensitive e-beam and X-ray resist, is inert to UV light. We found that the addition of a small amount of photoacid, triphenylsulfonium hexafluoroarsenate (TPSHFA), to PBS can catalyze its main chain scission via C-S bond cleavage by 254 nm deep UV exposure and concurrent baking at 80-degrees-C. Therefore, PBS can be used as a deep UV positive resist. The chemistry and resist characteristics of the PBS + TPSHFA system are discussed. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | POLY(BUTENE-1 SULFONE) | en_US |
dc.subject | TRIPHENYLSULFONIUM HEXAFLUOROARSENATE | en_US |
dc.subject | POSITIVE RESIST | en_US |
dc.title | PHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESIST | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
dc.citation.volume | 14 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 101 | en_US |
dc.citation.epage | 108 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:A1991FX01300003 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |