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dc.contributor.authorOu, M. N.en_US
dc.contributor.authorHarutyunyan, S. R.en_US
dc.contributor.authorLai, S. J.en_US
dc.contributor.authorChen, C. D.en_US
dc.contributor.authorYang, T. J.en_US
dc.contributor.authorChen, Y. Y.en_US
dc.date.accessioned2014-12-08T15:05:16Z-
dc.date.available2014-12-08T15:05:16Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn0370-1972en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssb.200777114en_US
dc.identifier.urihttp://hdl.handle.net/11536/3808-
dc.description.abstractThe thermal conductivity (K), specific heat (C-p) and the resistivity (p) of a single nickel nanowire have been measured in the temperature range from 4 to 300 K by means of the "self heating 3 omega" technique. Starting with a 100 nm nickel film grown on a Si/Si3N4 substrate by thermal evaporation, a suspended nickel nanowire was then fabricated through e-beam lithography and etching processes. The width and length of the wire were determined by scanning electron microscope (SEM) as 180 nm and 35 mu m respectively. At 300 K the thermal conductivity of nanowire is similar to 20% of the bulk, it diminishes to lower value as temperature decreases. The consequence is opposite to that of the bulk and might be explained by the ristriction of mean free paths of electron/phonon-phonon interactions due to the grain boundaries. An enhancement of specific heat similar to 250% of the bulk is also observed. In addition, the resistivity of nanowire at room temperature is about four times larger than that of the bulk. The small relative resistiv-ity ratio (RRR) confirms the polycrystalline characteristic ofthe nanowire.en_US
dc.language.isoen_USen_US
dc.titleThermal and electrical transport properties of a single nickel nanowireen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1002/pssb.200777114en_US
dc.identifier.journalPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSen_US
dc.citation.volume244en_US
dc.citation.issue12en_US
dc.citation.spage4512en_US
dc.citation.epage4517en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000252309500031-
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