完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWU, KHen_US
dc.contributor.authorLEE, CLen_US
dc.contributor.authorJUANG, JYen_US
dc.contributor.authorUEN, TMen_US
dc.contributor.authorGOU, YSen_US
dc.date.accessioned2014-12-08T15:05:18Z-
dc.date.available2014-12-08T15:05:18Z-
dc.date.issued1991-03-11en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.104380en_US
dc.identifier.urihttp://hdl.handle.net/11536/3839-
dc.description.abstractBy replacing the resistive heater with a CO2 laser to heat the substrates together with concentered oxygen stream blowing onto the substrate during deposition, high quality Y1Ba2Cu3O7-x thin films with nearly perfect c-axis orientation and T(c0) = 87 K were grown in situ without subsequent slow cooling in oxygen atmosphere or any further heat treatment. The rapid quenching, from typically 600-degrees-C to room temperature in less than 50 s of the as-deposited films, excludes the possibility of further oxygen incorporation during the cooling process and indicates that the in situ growth may have completed during deposition under proper deposition conditions.en_US
dc.language.isoen_USen_US
dc.titleINSITU GROWTH OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS USING A PULSED NEODYMIUM YTTRIUM-ALUMINUM-GARNET LASER WITH CO2-LASER HEATED SUBSTRATESen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.104380en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume58en_US
dc.citation.issue10en_US
dc.citation.spage1089en_US
dc.citation.epage1091en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1991FA93900033-
dc.citation.woscount11-
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