IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS

doi:10.1063/1.347385

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, JS	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHANG, KH	en_US
dc.contributor.author	LIU, DG	en_US
dc.contributor.author	LIOU, DC	en_US
dc.date.accessioned	2014-12-08T15:05:21Z	-
dc.date.available	2014-12-08T15:05:21Z	-
dc.date.issued	1991-01-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.347385	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3880	-
dc.description.abstract	We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-mu-m undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.	en_US
dc.language.iso	en_US	en_US
dc.title	IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1063/1.347385	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	69	en_US
dc.citation.issue	2	en_US
dc.citation.spage	1122	en_US
dc.citation.epage	1123	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1991EU22500097	-
dc.citation.woscount	6	-
顯示於類別：	期刊論文