标题: | 官能基修饰有机薄膜电晶体气体感测之研究 Functional Group Modification on Dielectric Interface of Pentacene-Based OTFTs for Ammonia Sensor Application |
作者: | 吴权陵 CHUAN-LING WU 冉晓雯 Hsiaowen Zan 光电工程学系 |
关键字: | 有机薄膜电晶体;生物分子;气体感测;专一性;OTFTS;SAM;SENSING |
公开日期: | 2008 |
摘要: | 在此论文中,我们藉由修改官能基来得到有机薄膜电晶体(OTFTs) 气体变化感觉能力。利用自组装单层膜(SAM)的方式,在氧化曾上分别修饰了三氨□丙基三乙氧基硅烷以及十八烷基三甲氧基硅烷.由于三氨□丙基三乙氧基硅烷以及十八烷基三甲氧基硅烷都是疏水层,因此会造成低表面能以利于五环素成长.因此氧化层与pentacene间的表面性质已经改变.而藉着改变表面态后的OTFTs来当作气体感测器.对于气体感应器, 在我们的之前的研究,四点探针的方法用来研究寄生电阻以及薄膜电阻的改变.同时也显示出,经过表面处理修饰后,pentacene薄膜电阻变化似乎已经变成主要因素,对于气体感应而言.但是,寄生电阻是影响气体感应的控制因素。相反结果,也可能由不同的SAMs解释导致pentacene 结构或薄膜载子密度, 进而影响OTFTs 与气体间的反应。另外, 多个参数,譬如载子迁移率、临界电压, 和次临界摆幅并且使用分析气体感应互作用。基于在这个结果下, 我们证明怎么增加对专一气体的感应能力,在藉由官能基修饰氧化层的方法下。在罗渊仁学长以及周政伟学长的指导下,一起合作进行此研究。 IN this thesis, we modify the functional groups to obtain diversity of organic thin-film transistors (OTFTs) gas sensing ability. By using self-assembled monolayer (SAMs) treatment, the silicon oxide surface (SiO2) was modified by 3-amino-propyltriethoxysilane (APTES) and n-octadecyltrimethoxysilane (ODMS). Both ODMS and APTES (with amine groups) were hydrophobic, which served a low surface-energy surface for pentacene film growth. Therefore, the interface properties between pentacene film and SiO2 will be significantly changed. The OTFTs with interface modifications was then used as gas sensors. During gas sensing, in our previous reports, the gated-four-probes method was also used to analyze the changes of contact resistance and pentacene-film resistance. It was shown that with interface modifications, pentacene film resistance variation will become a key factor in gas sensing. However, the contact resistance was dominated factor that influenced gas sensing. The contrary results can be explained by the different SAMs will result in different pentacene structure or thin-film carrier density, which influenced the OTFTs interaction to gases. Additionally, multiple parameters such as mobility, threshold voltage, and sub threshold swing were also used to analyze gas sensing interactions. Base on this result, we prove how to increase sensing ability of a specific material with functional groups modification on silicon oxide interface. In Cwei-Chou and Yuanren Lo’s instruction, we cooperate together and finish this research. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009524516 http://hdl.handle.net/11536/38894 |
显示于类别: | Thesis |
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