陣列微米孔洞表面糙化製程對於砷化鎵太陽電池效率之影響

Abstract

本論文主要研究主題為，探討三五族化合物太陽電池增益效率方法。第一部分我們利用微米孔洞陣列糙化製程方式，應用在InGaP表層電池上，陣列週期排列為5、10、15、20微米，量測的結果最好的增益是在陣列排列週期為5微米時，單層110奈米二氧化矽抗反射膜太陽電池效率可以由13.86%提升至15.93%；同時我們也設計了效果更佳的雙層介質抗反射膜，太陽電池元件效率可以提升至15.63%，微米孔洞陣列蝕刻應用在雙層介質抗反射層太陽電池上，效率更可進一步提升至16.28%。 另一部份，我們也對於單耦合接面砷化鎵太陽電池聚焦提升電池效率進行研究。在一般25。C，AM1.5G量測條件下，可以有22.68%太陽電池效率；進行聚焦量測聚焦太陽光後，設計表面放射型狀電極，並且聚焦1倍至200倍的太陽光，可觀察到電池轉換效率隨著聚焦倍率增加而增益，最佳的轉換效率可以有28.1%。

III-V compound semiconductor solar cell was fabricated and studied in the thesis. With an aim to improve the conversion efficiency, the InGaP p-n junction top cell was firstly fabricated by a new surface treatment of micro-hole array surface texture process. The periods of micro-hole array were arranged to be 5, 10, 15 and 20 □m, respectively. The conversion efficiency of the top InGaP p-n junction solarcell could be improved by micro-hole array surface texture process. It was found that with 5um micro hole array period, the efficiency was improved from 13.86% (standard process) to 15.93% while a single-layer SiO2 anti-reflection coating film was evaporated. To further improve the InGaP solar cell conversion efficiency, we had also used double-layer TiO2/MgF2 anti-reflection coating film, and we found that the efficiency was improved to 16.28% efficiency under AM 1.5g illumination. Secondly, the fabrication of GaAs p-n junction solar cell was studied. We also tried to improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration. A conversion efficiency of 22.68% (AM 1.5g 100 mW/cm2 25 ˚C) was achieved by using a 2.9% metal shielding mask design. To improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration, a radiative pattern for the metal grid was designed and the GaAs solar cell was measured under 1-sun to 200-suns. The conversion efficiency of the GaAs solar cell was increased with increased concentration ratio. A maximum conversion efficiency of ~28.1% was obtained.