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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorPAN, HTen_US
dc.date.accessioned2014-12-08T15:05:25Z-
dc.date.available2014-12-08T15:05:25Z-
dc.date.issued1990-11-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.585148en_US
dc.identifier.urihttp://hdl.handle.net/11536/3966-
dc.description.abstractIn our study the polydihexylsilane (PDHS), as a contrast enhancement material, we found that the values of A, B, and C of Dill's modeling parameters of PDHS are irregularly dependent on its film thickness, and also refractive index decreases during exposure. These difficulties make Dill's model inadequate for the simulation of contrast enhanced lithography. A new model was derived to simulate the nonlinear photobleaching curves of PDHS with varying thickness. Linearity was found with parameters in this equation as a function of PDHS film thickness. The thicker PDHS film does not improve the contrast within the usually used thickness range of 0.1-0.6-mu-m. This equation also models the nonlinear bleaching curve of p-diazo-N, N-dimethylaniline-chloride zinc chloride and the reported bleaching curve of CEM-2 quite well.en_US
dc.language.isoen_USen_US
dc.titleA DIRECT APPROACH TO THE MODELING OF POLYDIHEXYLSILANE AS A CONTRAST ENHANCEMENT MATERIALen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.585148en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume8en_US
dc.citation.issue6en_US
dc.citation.spage1731en_US
dc.citation.epage1734en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1990EP32300099-
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