完整後設資料紀錄
DC 欄位語言
dc.contributor.authorPEI, JHen_US
dc.contributor.authorDAI, CMen_US
dc.contributor.authorCHUU, DSen_US
dc.date.accessioned2014-12-08T15:05:27Z-
dc.date.available2014-12-08T15:05:27Z-
dc.date.issued1990-10-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://hdl.handle.net/11536/4001-
dc.language.isoen_USen_US
dc.titleSHALLOW SURFACE DONOR IMPURITY STATES OF GE, SI AND GAPen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICA Ben_US
dc.citation.volume167en_US
dc.citation.issue1en_US
dc.citation.spage40en_US
dc.citation.epage44en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1990EJ61000005-
dc.citation.woscount0-
顯示於類別:期刊論文