ANALYSIS OF THE DX TRAPS INDUCED TRANSIENT CHARACTERISTICS IN ALGAAS GAAS HEMTS

Full metadata record

DC Field	Value	Language
dc.contributor.author	WANG, TH	en_US
dc.contributor.author	YU, CC	en_US
dc.date.accessioned	2014-12-08T15:05:32Z	-
dc.date.available	2014-12-08T15:05:32Z	-
dc.date.issued	1990-08-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(90)90223-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4057	-
dc.language.iso	en_US	en_US
dc.title	ANALYSIS OF THE DX TRAPS INDUCED TRANSIENT CHARACTERISTICS IN ALGAAS GAAS HEMTS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(90)90223-2	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	8	en_US
dc.citation.spage	1081	en_US
dc.citation.epage	1087	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990DR88700016	-
dc.citation.woscount	1	-
Appears in Collections:	Articles