| 標題: | ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY |
| 作者: | YARN, KF WANG, YH CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 1-六月-1990 |
| URI: | http://hdl.handle.net/11536/4087 |
| ISSN: | 0950-0839 |
| 期刊: | PHILOSOPHICAL MAGAZINE LETTERS |
| Volume: | 61 |
| Issue: | 6 |
| 起始頁: | 339 |
| 結束頁: | 342 |
| 顯示於類別： | 期刊論文 |
- A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR / YARN, KF;CHANG, CY;WANG, YH;WANG, RL
- GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES / YARN, KF;WANG, YH;CHANG, CY
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