| 標題: | REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES |
| 作者: | WU, JS LEE, CP CHANG, CY CHANG, KH LIU, DG LIOU, DC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| 公開日期: | 1-五月-1990 |
| URI: | http://dx.doi.org/10.1063/1.344910 http://hdl.handle.net/11536/4109 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.344910 |
| 期刊: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 67 |
| Issue: | 9 |
| 起始頁: | 4382 |
| 結束頁: | 4385 |
| 顯示於類別： | 期刊論文 |
- ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS / WU, JS;CHANG, CY;LEE, CP;CHANG, KH;LIU, DG
- INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES / WU, JS;LEE, CP;CHANG, CY;CHANG, KH;LIU, DG
- ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES / WU, JS;CHANG, CY;LEE, CP;WANG, YH;KAI, F
- MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR / YARN, KF;CHANG, CY;WANG, YH;WANG, RL
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