MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS

Full metadata record

DC Field	Value	Language
dc.contributor.author	WU, CY	en_US
dc.contributor.author	JANG, WY	en_US
dc.contributor.author	LIU, ID	en_US
dc.date.accessioned	2014-12-08T15:05:35Z	-
dc.date.available	2014-12-08T15:05:35Z	-
dc.date.issued	1990-05-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(90)90232-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4121	-
dc.language.iso	en_US	en_US
dc.title	MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(90)90232-4	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	5	en_US
dc.citation.spage	489	en_US
dc.citation.epage	495	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1990CZ72900003	-
dc.citation.woscount	2	-
Appears in Collections:	Articles