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dc.contributor.authorWU, CYen_US
dc.contributor.authorJANG, WYen_US
dc.contributor.authorLIU, IDen_US
dc.date.accessioned2014-12-08T15:05:35Z-
dc.date.available2014-12-08T15:05:35Z-
dc.date.issued1990-05-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(90)90232-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/4121-
dc.language.isoen_USen_US
dc.titleMOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONSen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0038-1101(90)90232-4en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume33en_US
dc.citation.issue5en_US
dc.citation.spage489en_US
dc.citation.epage495en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1990CZ72900003-
dc.citation.woscount2-
顯示於類別:期刊論文