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dc.contributor.authorLEE, THen_US
dc.date.accessioned2014-12-08T15:05:35Z-
dc.date.available2014-12-08T15:05:35Z-
dc.date.issued1990-04-12en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:19900355en_US
dc.identifier.urihttp://hdl.handle.net/11536/4131-
dc.language.isoen_USen_US
dc.titleBEHAVIOR OF CIRCUIT-SWITCHED MULTISTAGE NETWORKS IN PRESENCE OF MEMORY HOT SPOT - COMMENTen_US
dc.typeEditorial Materialen_US
dc.identifier.doi10.1049/el:19900355en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume26en_US
dc.citation.issue8en_US
dc.citation.spage546en_US
dc.citation.epage547en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:A1990DB40700033-
dc.citation.woscount0-
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