| 標題: | HIGH-TEMPERATURE STABILITY OF PLATINUM SILICIDE ASSOCIATED WITH FLUORINE IMPLANTATION |
| 作者: | TSAI, JY TSUI, BY CHEN, MC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| 公開日期: | 1-Apr-1990 |
| URI: | http://dx.doi.org/10.1063/1.345327 http://hdl.handle.net/11536/4143 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.345327 |
| 期刊: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 67 |
| Issue: | 7 |
| 起始頁: | 3530 |
| 結束頁: | 3533 |
| Appears in Collections: | Articles |
- EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE / TSUI, BY;TSAI, JY;WU, TS;CHEN, MC
- Formation of cobalt silicided shallow junction using implant into through silicide technology and low temperature furnace annealing / Chen, BS;Chen, MC
- 矽化鉑蕭特基金氧半電晶體使用高介電係數介電層與金屬閘極 / 古登傑;Ku, Teng-Chieh;荊鳳德
- LOW-TEMPERATURE FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN PD2SI FILMS ON SI SUBSTRATES / LIN, CT;MA, KP;CHOU, PF;CHENG, HC
- ROLE OF FLUORINE-ATOMS ON THE THERMAL-STABILITY OF THE SILICIDE SILICON STRUCTURE / TSUI, BY;CHEN, MC
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