| 標題: | THRESHOLD SWITCHING TRANSIENT IN METAL A-SI-H C-SI(P-N) (MASS) HETEROJUNCTION DEVICE |
| 作者: | CHEN, YW FANG, YK LEE, HD CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 1-Apr-1990 |
| URI: | http://dx.doi.org/10.1016/0038-1101(90)90051-F http://hdl.handle.net/11536/4147 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(90)90051-F |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 33 |
| Issue: | 4 |
| 起始頁: | 461 |
| 結束頁: | 465 |
| Appears in Collections: | Articles |
- Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) p(+)/n and n(+)/p Heterojunctions Formed on Si Substrate / Chen, Che-Wei;Chung, Cheng-Ting;Tzeng, Ju-Yuan;Li, Pin-Hui;Chang, Pang-Sheng
- Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodes / Lin, Pei-Hsuan;Chen, Cheng-Pin;Hung, Yen-Jen;Hsu, Shao-Sun;Chen, Liang-Yi
- High On/Off Ratio and Very Low Leakage in p(+)/n and n(+)/p Germanium/Silicon Heterojunction Diodes / Chen, Che-Wei;Chung, Cheng-Ting;Lin, Jyun-Chih;Luo, Guang-Li;Chien, Chao-Hsin
- A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation / Yu, M. H.;Liao, M. H.;Huang, T. C.;Wang, L. T.;Lee, T. L.
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