利用大氣電漿對有機半導體之介電層表面做改質研究

Abstract

本論文研製之利用旋塗方式沉積有機薄膜電晶體對於元件製作有大面積且低成本的好處。由於有機薄膜電晶體的效能跟半導體與介電層之間的介面特性有很大的關係，所以此篇論文的研究目標是藉控制半導體與介電層之間的化學特性，並呈現有機薄膜電晶體的改良特性。而因為二氧化矽的製作及介面改質容易，在此我們選擇熱氧化方式的二氧化矽作為我們的介電層。高規則度聚(3-烷基噻吩P3HT)具有較高的結晶排列特性，能夠提供薄膜電晶體元件較高的電子遷移率，因此選用作為元件半導體層。經由六甲基二矽氮烷的自組裝層所處理的氧化層介面， P3HT薄膜電晶體將獲得明顯的改善。我們將使用常壓式電漿來實現介面處理。而常壓電漿系統是可使用在大氣壓之下，同時製程溫度在120度以下。在本文可以看到這些表面處理過後的電氣特性。處理過後的臨界電壓可被降至-9伏特以內，載子遷移率也由原先的1.9×10-3cm2/Vs提升至2.62×10-2cm2/Vs。在本文中，可驗證常壓式電漿系統，可提供低溫且高效率的有機薄膜電晶體介面改質製程。

A procedure is using the spin coat way twists the organic thin film transistor can gain the advantage which is large area and lower cost in manufacturing. Because there is a close relations among the organic thin film transistor's potency, the semiconductor and the dielectric level's interface characteristic. Therefore the research objective of the study is to present the improvement characteristic of the organic thin film transistor by the affiliation control semiconductor and the dielectric level chemical characteristic. And because the silicon dioxide manufacture and the interface change the nature is easy, we choose the thermal oxidization, the silicon dioxide, to be our dielectric level. High regioregularity poly(3-hexylthiophene) has the high crystallization arrangement characteristic, will provide the thin transistor part high electronic mobility, therefore it is selected to be the part semiconductor level. Through hexamethyldisilazane (HMDS) the oxide layer interface which will process from the assembly level institute, the P3HT thin film transistor will obtain the distinct improvement. We will use the to atmospheric-pressure plasma technology (APPT) to realize interface processing. And atmospheric-pressure plasma technology (APPT) can be used under the atmospheric pressure, simultaneous regulation temperature below 120 ℃. May see these surface treatment from now on electrical specification in this article. Processing from now on threshold voltage may drop to the - 9 volts, field-effect mobility also to promote by original 1.9×10-3cm2/Vs to 2.62×10-2cm2/Vs. That can confirm the atmospheric pressure plasma system, can provide the low temperature, and the high efficiency's organic thin film transistor interface to change the nature system regulation.