Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHENG, HC | en_US |
| dc.contributor.author | CHAO, CY | en_US |
| dc.contributor.author | SU, WD | en_US |
| dc.contributor.author | CHANG, SW | en_US |
| dc.contributor.author | LEE, MK | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.date.accessioned | 2014-12-08T15:05:37Z | - |
| dc.date.available | 2014-12-08T15:05:37Z | - |
| dc.date.issued | 1990-03-01 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0038-1101(90)90202-P | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/4162 | - |
| dc.language.iso | en_US | en_US |
| dc.title | THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDES | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1016/0038-1101(90)90202-P | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 365 | en_US |
| dc.citation.epage | 373 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:A1990CW10500009 | - |
| dc.citation.woscount | 6 | - |
| Appears in Collections: | Articles | |
