以乾式蝕刻鏡面製作砷化銦量子點之邊射型雷射

Abstract

本論文以乾式蝕刻鏡面製作砷化銦量子點之邊射型雷射進行研究。首先在製程方面，我們設計一套製程方式，透過電感耦合電漿蝕刻機蝕刻出垂直鏡面。在製作量子點雷射前，先以量子井雷射做為測試，證實此製程之可行性，接下來以InAs/GaAs材料的量子點取代量子井，成功地做出乾式蝕刻鏡面之量子點邊射型雷射。 接著在量測分析方面，針對乾式蝕刻鏡面邊射型雷射與傳統鏡面(自然劈裂)邊射型雷射做特性上的分析與比較。透過此雷射特性分析，且利用起始電流的比較可知此鏡面的平整程度，進而可在製程上做改善。最後透過加深蝕刻深度以及製程上的最佳化來改善鏡面，對於雷射特性有顯著改善。

This thesis focus on fabrication of InAs quantum dot edge emitting lasers with dry etched mirror. First, we demonstrated a new process flow of edge emitting lasers with dry etched mirror formed by inductivity coupled plasma. Before fabrication of quantum dot edge emitting lasers, we used the laser structure of InGaAs quantum well to prove that the process is practical. Eventually, we make a success of quantum dot lasers with dry etched mirrors. Then in measurement, we estimate the mirror loss of the dry etched mirror laser by comparing the characteristic curves of the etched mirror laser with those of a cleaved mirror laser. Finally, we improve the characteristics of dry etched mirror laser by increasing the etching depth with skilled process.