Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | LIN, C | en_US |
dc.contributor.author | LEE, CP | en_US |
dc.date.accessioned | 2014-12-08T15:05:40Z | - |
dc.date.available | 2014-12-08T15:05:40Z | - |
dc.date.issued | 1990-01-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.345300 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/4199 | - |
dc.language.iso | en_US | en_US |
dc.title | COMPARISON OF AU/NI/GE, AU/PD/GE, AND AU/PT/GE OHMIC CONTACTS TO N-TYPE GAAS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.345300 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 67 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 260 | en_US |
dc.citation.epage | 263 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1990CJ43600040 | - |
dc.citation.woscount | 17 | - |
Appears in Collections: | Articles |