共主體之等雙極材料應用於p-i-n有機發光二極體研究

Abstract

運用雙極特性的材料2-methyl-9,10-di(2-naphthyl)anthracene (MADN)掺雜p型材料氧化鎢(WO3)以及MADN掺雜n型材料氟化銫(CsF)做為新穎性且為單一材料當做主體的p及n型掺雜層。研究發現運用10%的WO3掺雜到MADN內以tris(8-quinolinolato)-aluminium Alq3當做發光層的p-i-i元件中具有較佳的電流效率(4.0 cd/A)以及能量效率(2.4 lm/W)，比使用NPB當做p型掺雜層主體有更好的效率。另外；運用MADN掺雜WO3與CsF當做p型及n型的掺雜層，運用在MADN掺雜BUBD-1的天藍光發光層的有機電激發光二極體元件可以在亮度1700 cd/m2時得到很低的驅動電壓(4.7V)，高效率(5.7 lm/W)且光色為C.I.Ex,y=(0.18, 0.33)。最後利用這個p-i-n的結構製成雙波段的螢光白光；利用天藍光與橘光的光色混成，在亮度1800 cd/m2時得到很低的驅動電壓(4.5V)，高效率(6.3 lm/W)且光色為C.I.Ex,y=(0.38, 0.40)，演色性指數(CRI)為67。，這個新穎的結構可以容易地簡化p-i-n元件的製程與節省材料。

Efficient p-doped and n-doped transport layers composed of a common ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) with tungsten oxide (WO3) and cesium fluoride (CsF), respectively have been developed. The incorporation of 10% WO3 into MADN as p-doped HIL and 30% CsF into MADN as n-doped EIL have been found to enhance the carrier injection from both anode and cathode, respectively. By also using MADN as a common material as host emitter, we demonstrated a much simplified p-i-n sky blue OLED device based on BUBD-1 dopant with low drive voltage (4.7 V), and high power efficiency (5.7 lm/W) at 1700 cd/m2 and C.I.Ex,y (0.18, 0.33) as well as a dichromatic p-i-n white fluorescent OLED device based on BUBD-1 and yellow EY-53 dopant with low drive voltage (4.5 V), and high power efficiency (6.3 lm/W) at 1800 cd/m2, C.I.Ex,y (0.38, 0.40) and Color Redering Index(CRI) 67.