氫化非晶矽薄膜太陽能電池之最佳化研究

Abstract

在此本論文中，我們利用射頻電漿輔助化學氣相沉積系統(RF-PECVD)在玻璃上沉積非晶矽薄膜太陽能電池。首先，對於本質非晶矽，p型非晶矽跟 n 型非晶矽 的單膜的光電特性進行分析，並且找出最佳適用於薄膜太陽能電池。著我們利用加入甲烷 (CH4) 以改變p型非晶矽的光學特性，光學能隙可到2 eV。但由於加入甲烷使得p 型非晶矽的導電性變差，以必須選擇適當的條件。驗結果顯示太陽能電池加入非晶矽碳可以增加開路電壓從 0.75V 增加到 0.78V 短路電流也可以從10.23mA/cm2 到 12.76mA/cm2。一方面將太陽能退火處理，可使太陽能電池的特性變好。最佳的薄膜太陽能特性是效率是8.67%。

In this study, hydrogenated amorphous silicon (s-Si:H) solar cell was fabricated by plasma enhanced chemical vapor deposition (PECVD). First, we optimized condition of the deposited single layer for p-layer, i-layer and n-layer, respectively. In order to investigate film property, the optoelectronic and optical properties was measured by Fourier Transform Infrared Spectroscopy (FTIR), UV/VIS/NIR spectrometers. The property of hydrogenated amorphous silicon carbide (a-SiC:H) p-layer was measured and discussed. Comparing the photovoltaic performances of the as grown solar cell with p-layer for a-Si:H and a-SiC:H ,respectively. By using wide bandgap p-layer, the open-circuit voltage (Voc) increased from 0.75V to 0.78V with corresponding short-circuit current (Jsc) increased from 10.23mA/cm2 to 12.76mA/cm2. Post-treatment of the cell was also carried out and significant increase in the fill factor (FF), efficiency, and Voc were observed. The experiment result showed an improvement between the Ag back electrode and amorphous n-layer. Different cell area of 2×2 cm2 and 1×1 cm2 were also fabricated. A cell conversion efficiency of 8.67% was achieved for a cell area of 2×2cm2.