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dc.contributor.authorWu, Chia-Haoen_US
dc.contributor.authorSheu, Jeng-Tzongen_US
dc.contributor.authorChen, Chia Haoen_US
dc.contributor.authorChao, Tieng-Shengen_US
dc.date.accessioned2014-12-08T15:05:42Z-
dc.date.available2014-12-08T15:05:42Z-
dc.date.issued2007-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.6272en_US
dc.identifier.urihttp://hdl.handle.net/11536/4229-
dc.description.abstractA new approach is introduced for the selective deposition of colloidal gold nanoparticles (AuNPs) onto the surface of unpatterned self-assembled monolayers (SAMs). The patterning of N-(2-aminoethyl)-3-aminopropyltrimethoxysilane (AEAPTMS) SAMs is realized by local field-induced bond breaking using scanning probe lithography (SPL) on a thin SiO2 surface. Different tip/sample biases were investigated to determine the bond breaking efficiency of AEAPTMS SAMs. It was found that bond breaking efficiency was limited by tunneling current through the thin SiO2 film so that both the tip bias and the tip scanning speed play important roles. AuNPs with negatively charged citrate surfaces were selectively anchored onto the unpatterned area via electrostatic force between AEAPTMS SAMs and AuNPs. Single-digit numbers of AuNPs anchored onto unpatterned AEAPTMS SAMs were demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectself-assembled monolayer (SAM)en_US
dc.subjectgold nanoparticles (AuNPs)en_US
dc.subjectN-(2-aminoethyl)-3-aminopropyltrimethoxysilane (AEAPTMS)en_US
dc.subjectbond breakingen_US
dc.subjectscanning probe lithography (SPL)en_US
dc.subjectatomic force microscopy (AFM)en_US
dc.titleScanning probe lithography of self-assembled N-(2-aminoethyl)-3-aminopropyltrimethoxysilane monolayers on SiO2 surfaceen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.46.6272en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue9Ben_US
dc.citation.spage6272en_US
dc.citation.epage6276en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000250066700036-
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