摻硫及摻碲硒化鎵晶體光學特性與應用於中紅外光產生之研究

Abstract

在本論文中，利用實驗室所建立之兆赫茲(THz)波段的時域頻譜量測分析技術，研究摻硫及摻碲硒化鎵晶體在此頻段下的電磁特性，利用量測結果與理論分析可獲得摻雜濃度與頻率相關之複數折射率，並進一步求得材料之介電係數。除此之外，利用差頻效應產生中紅外光，分析不同元素摻雜所造成的影響，以作為將來產生更高功率中紅外脈衝光之依據。

In this thesis, the electromagnetic characteristics of sulfur-doped gallium selenide (GaSe) and tellurium-doped gallium selenide among terahertz (THz) were studied by analyzing terahertz time domain spectroscopy. According to our experiment results and theoretical analysis, the frequency-related complex refractive index under various doping concentration and thereby the dielectric constant can be extracted. By utilizing the mid-infrared ray via difference-frequency effect generation, the influence resulting from different element doping was observed. As a result, in comparison of these data, a higher power mid-infrared pulse can be produced.