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dc.contributor.author簡靈櫻en_US
dc.contributor.authorChien, Ling-Yingen_US
dc.contributor.author江進福en_US
dc.contributor.author林登松en_US
dc.contributor.authorJiang, Tsin-Fuen_US
dc.contributor.authorLin, Deng-Sungen_US
dc.date.accessioned2014-12-12T01:31:02Z-
dc.date.available2014-12-12T01:31:02Z-
dc.date.issued2008en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079627504en_US
dc.identifier.urihttp://hdl.handle.net/11536/42693-
dc.description.abstract當一個雙原子氣體分子撞擊至表面時,可能發生散射、分子吸附、裂解式吸附、或是選擇性原子吸附,決定這些反應背後的機制大部份尚未釐清。Si(100)是常使用的半導體基板,其表面上有許多活性鍵可與分子發生化學反應,HCl分子是鍵結能很強的常見離子分子(鍵結能為4.3 eV),本論文的研究的目標是以最先進的技術與方法了解HCl分子在矽表面上究竟是發生那些反應?為了簡化過去研究中所遇到的複雜數據解釋問題,我們使用單一層氫原子光阻(atomic hydrogen resist),將分子與表面發生化學反應的範圍侷限在單一活性鍵。掃描穿隧顯微鏡(STM)可拍攝到原子解析度的表面影像,所以在曝HCl氣體前掃描一張矽表面的影像,曝HCl氣體時探針離開掃描區域,之後再掃描一張影像,即可由前後的影像變化直接觀察到單一活性鍵和HCl分子的吸附情形。 實驗結果顯示HCl分子中一個原子跟單一活性鍵發生選擇性吸附反應,也就是吸附H原子和Cl原子的比例約為3:1,另一個游離原子一部份會直接脫附回到真空中,一部份會留在表面上並發生反應。比如在吸附H原子的情形,有35%的游離Cl原子會取代鄰近原子光阻的氫原子,而且最易取代的位置是發生在跟單一活性鍵同一個雙原子單體(dimer)的位置。此實驗研究提供了雙原子分子在表面上發生選擇性吸附的直接證據,這個結果也顯示,在HCl分子吸附過程中應該會形成一個暫態(precursor state),而表面聲子提供了裂解HCl分子鍵結所須的能量。zh_TW
dc.description.abstractThe abstractive adsorption of an HCl molecule on a single dangling bond has been investigated by scanning tunneling microscopy (STM). Each single dangling bond is an isolated reaction site and is produced on hydrogen-passivated Si(100) surfaces by controlling the sample temperature and annealing time. From the STM images, we conclude that a HCl molecule can undergo a selective abstraction reaction with a Si dangling bond and that the reaction prefers the adsorption of the H atom over the Cl atom. The ratio of H-abstraction to Cl-abstraction is 3:1. Experimental evidence also indicates that the adsorption process involves a precursor state, or an adsorption complex. Upon adsorption of a phonon, the adsorption complex transforms to a chemisorbed adsorption of one atom and let free the complementary atom on the surface. If H is first abstracted, the complementary Cl atom can either replace an nearby H atom with ~35% probability or is rejected back to vacuum. This research reveals a direct experimental visualization of the abstractive chemisorptions.en_US
dc.language.isozh_TWen_US
dc.subject氯化氫zh_TW
dc.subject矽晶面zh_TW
dc.subject選擇性吸附zh_TW
dc.subject活性鍵zh_TW
dc.subject聲子zh_TW
dc.subject活化能zh_TW
dc.subjectHClen_US
dc.subjectSi(100)en_US
dc.subjectabstraction adsorptionen_US
dc.subjectdangling bonden_US
dc.subjectphononen_US
dc.subjectactivation energyen_US
dc.title氯化氫在矽表面上單一活性鍵的選擇性吸附zh_TW
dc.titleAbstractive adsorption of a HCl molecule on an isolated dangling bonden_US
dc.typeThesisen_US
dc.contributor.department物理研究所zh_TW
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