完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Kawachi, Toshihide | en_US |
dc.contributor.author | Fudo, Hidekimi | en_US |
dc.contributor.author | Iwata, Yoshio | en_US |
dc.contributor.author | Matsumoto, Shunichi | en_US |
dc.contributor.author | Sasazawa, Hideaki | en_US |
dc.contributor.author | Mori, Tadayoshi | en_US |
dc.date.accessioned | 2014-12-08T15:05:46Z | - |
dc.date.available | 2014-12-08T15:05:46Z | - |
dc.date.issued | 2007-08-01 | en_US |
dc.identifier.issn | 0894-6507 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TSM.2007.901831 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/4296 | - |
dc.description.abstract | High performance analog (HPA) CMOS devices with multiple threshold voltages have been successfully fabricated in a 0.13-mu m logic-based mixed-signal CMOS process on a single chip. The HPA devices demonstrate superior drivability, dc gain, matching, and reliability using an optimized halo and lightly doped drain (LLD) engineering approach combined with a unique dual gate oxide module for aggressive gate oxide thickness scaling. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | focusing | en_US |
dc.subject | photolithography | en_US |
dc.subject | resists | en_US |
dc.subject | scatterometry | en_US |
dc.title | Highly sensitive focus monitoring on production wafer by scatterometry measurements for 90/65-nm node devices | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/TSM.2007.901831 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | en_US |
dc.citation.volume | 20 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 222 | en_US |
dc.citation.epage | 231 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000248669800006 | - |
顯示於類別: | 會議論文 |