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dc.contributor.authorLEE, CPen_US
dc.contributor.authorLIU, THen_US
dc.contributor.authorWU, SCen_US
dc.date.accessioned2014-12-08T15:05:46Z-
dc.date.available2014-12-08T15:05:46Z-
dc.date.issued1989-09-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF02657477en_US
dc.identifier.urihttp://hdl.handle.net/11536/4302-
dc.language.isoen_USen_US
dc.titleCOMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAASen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF02657477en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume18en_US
dc.citation.issue5en_US
dc.citation.spage623en_US
dc.citation.epage626en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1989AP36100011-
dc.citation.woscount1-
Appears in Collections:Articles


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