標題: Persistent photoconductivity in n-type GaN
作者: Chen, HM
Chen, YF
Lee, MC
Feng, MS
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 15-七月-1997
摘要: Results of photoconductivity measurements in undoped n-type and Se-doped GaN epitaxial thin films are presented. Similar to the photoluminescence spectra, the photoconductivity also shows a broad yellow band centered around 2.2 eV. It is found that persistent photoconductivity (PPC) does exist in all the studied thin films. In addition, the PPC effects can be observed for the pumping photon energy down to the yellow band. The results reveal that the origin of the PPC effect and yellow luminescence may arise from the same intrinsic defect. It is shown that the most probable candidate of the intrinsic defect is nitrogen antisite. (C) 1997 American Institute of Physics.
URI: http://hdl.handle.net/11536/436
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 82
Issue: 2
起始頁: 899
結束頁: 901
顯示於類別:期刊論文