RAMAN INVESTIGATION OF RUS2

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIN, SS	en_US
dc.contributor.author	HUANG, YS	en_US
dc.contributor.author	HUANG, CR	en_US
dc.contributor.author	LEE, MC	en_US
dc.date.accessioned	2014-12-08T15:05:52Z	-
dc.date.available	2014-12-08T15:05:52Z	-
dc.date.issued	1989-02-01	en_US
dc.identifier.issn	0038-1098	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4401	-
dc.language.iso	en_US	en_US
dc.title	RAMAN INVESTIGATION OF RUS2	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID STATE COMMUNICATIONS	en_US
dc.citation.volume	69	en_US
dc.citation.issue	6	en_US
dc.citation.spage	589	en_US
dc.citation.epage	593	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1989T239200001	-
dc.citation.woscount	10	-
顯示於類別：	期刊論文