一維硒化鉛奈米顆粒陣列之電性研究

Abstract

本研究旨在利用介電泳的方法使錳摻雜硒化鉛奈米顆粒陣列與製作好的晶片有良好的接觸。實驗製作好的晶片共有六個，藉由低溫致冷器降低實驗的溫度，使溫度可介於300 K至80 K之間。之後便可量測溫度改變後的電流-電壓曲線，以研究PbMnSe奈米陣列元件的電性；隨後也量測了溫度與電阻之關係。 量測過程中發現電流與電壓的關係曲線圖呈線性關係；並發現在溫度與電阻之關係圖中發現當溫度下降時電阻值反而上升，呈現半導體之特性。我們可使用熱擾動所造成的穿遂效應理論來解釋這樣的現象。

The purpose of the research is to make PbMnSe quantum-dot array device with good contacts by using a standard dielectrophoresis method. We have fabricated six devices for electrical characterizations. The devices are positioned in a cryostat for a change of environmental temperature from 300 K down to 80 K. We have obtained temperature dependent current-voltage curves of the six devices. We have calculated the temperature dependent resistance of our devices as well. We found that, in a temperature range of 80–300 K, the current-voltage of the nanoarray devices display a linear dependence. In addition, the resistances of our devices reveal negative temperature dependences and display semiconducting behaviors. The temperature behavior can be fitted well with the theoretical model of the fluctuation-induced tunneling effect.