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dc.contributor.authorKo, T. S.en_US
dc.contributor.authorChu, C. P.en_US
dc.contributor.authorChen, J. R.en_US
dc.contributor.authorChang, Y. A.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:05:53Z-
dc.date.available2014-12-08T15:05:53Z-
dc.date.issued2007-07-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2710244en_US
dc.identifier.urihttp://hdl.handle.net/11536/4407-
dc.description.abstractThe authors reported the synthesis of indium oxide nanocrystal chains on silicon substrates using gold nanoparticles as catalyst on native silicon dioxide. Scanning electron microscopy investigations showed that In2O3 nanocrystal chains were formed. The nanocrystal chains comprised many well shaped octahedron nanoparticles with their size ranging from 20 to 100 nm connected with each other to form a network. Both high resolution transmission, electron microscopy and diffraction pattern revealed that the In2O3 nanocrystal chains were single crystalline grown along the [111] direction. Photoluminescence study of In2O3 nanocrystal chains exhibited main photoemission at 544 nm due to the recombination between electrons in localized state induced by oxygen vacancies and holes in valence band. After the annealing treatment, the main photoluminescence peak not only slightly redshifted to 558 nm but also became narrower, which was attributed to the total localized state away from the conduction band caused by less defect distribution. (c) 2007 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleSynthesis of In2O3 nanocrystal chains and annealing effect on their optical propertiesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.2710244en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume25en_US
dc.citation.issue4en_US
dc.citation.spage1038en_US
dc.citation.epage1041en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000248491700066-
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