氧化鉺薄膜於電阻式記憶體的製作與轉態特性之研究

Abstract

近年來，由於非揮發性記憶體的應用與發展受到矚目，加上快閃記憶體的微縮極限，有關新世代非揮發性記憶體的發展呈現百家爭鳴的情形。 其中，電阻式非揮發性記憶元件具有低功率消耗、高密度、高操作速度、高耐久性、微縮能力高及非破壞性資料讀取等優點，使其成為新世代非揮發性記憶元件的熱門人選。 這篇論文中，著重於白金/氧化鉺/氮化鈦元件電阻轉態特性的研究與探討，其內容可分為幾個部份，包含元件尺寸效應、限流、截止電壓、定電壓量測、定電流量測與變溫量測。藉由這幾種不同的元件與量測方式探討在薄膜內轉態的情行以及轉態層轉態時的氧化還原反應，進而提出轉態之模型解釋實驗觀察到的現象。 這篇論文中，建立了白金/氧化鉺/氮化鈦元件的轉態模型，造成電阻轉態的位置為氧化鉺/氮化鈦介面的電驅動氧化還原反應。此模型可以解釋在不同量測條件下的結果。以及利用實驗結果萃取出化學反應活化能，進而計算出資料儲存的可靠度問題。評估元件在應用上的可行性

Recently, nonvolatile memories have receive greater attention became of their wide application in electronic systems, the conventional floating gate memories are expected to reach certain technical and physical limit in the near future, and the wealth of researches have been proceeded for the next generation nonvolatile memories. The resistive random access memories (RRAMs) is a major candidate for the next-generation nonvolatile memory due to its advantages of low power consumption, and high-bit desity, high speed, high endurance and nondestructive read. In this thesis, the resistive switching characteristics in Pt/ErOx/TiN device are investigated, and our study can be categorized into seve parts included the cell size effect, thickness effect, current compliances, the stop voltages , constant voltage stresses, constant current stresses and temperature effect. By exploiting these few kinds of devices and measurement skills, we can investigated the filament formation and redox in the device when resistive switching occurs. We propose a model to explain the phenomenon observed in our experiments. The model which is electrically driven redox reaction at the local interface between ErO and TiN electrode behind the filament that is formation in forming process had been established. It can explain the temperature effect and resistive switching behavior under stress. The activate energy had been measured to calculate the retention and read disturb behavior.