| Title: | ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN SEMICONDUCTORS WITH NONUNIFORM COMPOSITION .1. NONDEGENERATE |
| Authors: | CHANG, KM 電子工程學系及電子研究所 電控工程研究所 Department of Electronics Engineering and Institute of Electronics Institute of Electrical and Control Engineering |
| Issue Date: | 1-Nov-1988 |
| URI: | http://hdl.handle.net/11536/4476 |
| ISSN: | 0013-4651 |
| Journal: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 135 |
| Issue: | 11 |
| Begin Page: | 2859 |
| End Page: | 2862 |
| Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
- ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN DEGENERATE SEMICONDUCTORS WITH NONUNIFORM COMPOSITION / CHANG, KM;YEH, TH;WANG, SW;LEE, CH
- BAND DISCONTINUITIES - A SIMPLE ELECTROCHEMICAL APPROACH / CHANG, KM
- A CONSISTENT MODEL FOR CARRIER TRANSPORT IN HEAVILY DOPED SEMICONDUCTOR-DEVICES / CHANG, KM
- 2 NEW GENERALIZED EQUATIONS FOR MINORITY-CARRIER TRANSPORT IN BIPOLAR-TRANSISTORS WITH HEAVILY DOPED BASE AND NONUNIFORM BAND-STRUCTURE / CHANG, KM;TSAI, JY
- SCATTERING MECHANISMS OF THE HALL-EFFECT AND TRANSVERSE MAGNETORESISTANCE IN NON-DEGENERATE PIEZOELECTRIC SEMICONDUCTORS / WU, CC;LIN, CJ;TSAI, J
Loading...