标题: | 低温复晶矽薄膜电晶体背光下之单位光通量漏电流特性分析 Study on the Mechanism of Unit-Lux Current Arisen by Back Light for LTPS TFTs |
作者: | 林志融 Lin, Chih-Jung 戴亚翔 Tai, Ya-Hsiang 显示科技研究所 |
关键字: | 低温复晶矽;单位光通量;背光;Low Temperature Poly-silicon;LTPS;Unit-Lux Current;ULC;Back Light |
公开日期: | 2010 |
摘要: | 低温多晶矽薄膜电晶体(LTPS TFTs)已被广泛研究在平板的应用,例如在主动式矩阵液晶显示器(AMLCDs)和主动式矩阵有机发光二极体(AMOLEDs)。高亮度的背光照明下,光漏电流的存在容易造成画素电压的下降而导致串音(Cross talk)的产生。因此,光对低温薄膜电晶体是值得调查。 在这篇论文中,我们分析了低温复晶矽薄膜电晶体在背光照明下影响的光漏电流。我们漏电流在背光下可用一个经验公式表示。我们也比较了背光和正光条件下的光行为。定性模型来解释在热载子效应(Hot Carrier effect)与自发热(Self Heating effect)后产生的缺陷提出相应的光照行为。缺陷中心影响光漏电流的行为与缺陷陷阱的能级非常相关。在直流偏压后有两种缺陷造成。我们提供新的见解之间的连接缺陷能级和光感应电流,从而进一步确认缺陷的特性。我们相信,这项研究的背光感应漏电流在设计中考虑是非常有用,并减少漏电流在薄膜电晶体液晶显示器中。 Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) have been widely investigated for flat-panel applications, such as for active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diodes (AMOLEDs). The high illumination intensity from back light increases the leakage current of LTPS TFTs and results in the decrease of pixel voltage and the increase of cross talk. Therefore, photo effect on LTPS TFTs is worthy of investigation. In this thesis, we analyze the effect of back light illumination for LTPS TFTs based on the photo leakage current. The leakage current under back light can be expressed by an empirical equation. We also compare the photo behaviors of back light with that of front light condition. Qualitative models are proposed to explain the illumination behaviors corresponding to the defects created after hot carrier stress and self heating stress. Defect center behaviors which influence the photo leakage current are strongly related to the energy level of trap defects. There are two kinds of defects created by DC stress. We provide new insight on the connection between the energy levels of the defects and the photo induced current, which can further confirm the characteristics of the defects. We believe this study of the backlight induced leakage current can be very useful in the design consideration and the leakage current reduction in the TFT LCD. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079715515 http://hdl.handle.net/11536/44799 |
显示于类别: | Thesis |
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