完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | 陈良湘 | en_US |
dc.contributor.author | Chen, Liang-Hsiang | en_US |
dc.contributor.author | 林鹏 | en_US |
dc.contributor.author | Lin, Pang | en_US |
dc.date.accessioned | 2014-12-12T01:39:56Z | - |
dc.date.available | 2014-12-12T01:39:56Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT079718810 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/44947 | - |
dc.description.abstract | 本论文针对以下两类有机电子材料进行研究,以期应用于有机薄膜电晶体(OTFT)元件的制作。 第一类为闸极绝缘层。1-(a) 研究开发以溶胶-凝胶法制备五氧化二钽掺杂在高分子聚亚醯胺之绝缘薄膜,1-(b) 研究常用的高分子PI和PVP绝缘薄膜,验证它们在OTFT制程中的匹配特性。 第二类为在导电高分子中掺杂奈米银线当作有机薄膜电晶体的透明电极,导电高分子为poly-(3,4-ethylenedioxythiophene /polystyrene sulphonate) (PEDOT: PSS)。 上述材料皆与可溶性有机半导体5,11-bistriethylsilylethynyl anthradithiophene ( TES-ADT)进行整合,制成OTFT。并对该元件的物理与电性做一系列研究与探讨。 1-(a)子项的研究发现聚亚醯胺中五氧化二钽添加量增加时复合薄膜的热性质会变差而介电常数增加。制成的OTFT载子迁移率会随薄膜介电常数升高而增加。此外,五氧化二钽添加量也会影响亚醯胺化程度并影响薄膜之漏电流。 第一类(b)子项的研究发现PI和PVP薄膜不同的表面能会影响 TES-ADT的成膜品质以及所制成的OTFT电性稳定性。并且确认图案化制程可以提升OTFT电流的开关比,其侧向漏电也可以大幅的降低。以表面能较低的PI为绝缘材料,所制成的元件开关比可由102提升至106,并使得TES-ADT薄膜成长结晶较佳,其载子移动率可达0.43 cm2/Vs。 第二类的研究将奈米银线与导电高分子复合材料发展为可涂布式,所得透明薄膜电极在可见光区域的穿透度可达70 %。片电阻可小于140 Ω/sq。以0.1 wt银线比例混合的电极功函数为5.0 eV。其与OTFT元件的接触阻值为2.7x 104 Ω•cm。以TES-ADT薄膜匹配此电极,可制得元件载子移动率0.21 cm2/Vs。 | zh_TW |
dc.description.abstract | In this study, two kinds of organic electronic materials have been studied for the application in organic thin film transistors (OTFT). The first kind is the thin-film materials for gate insulator. 1-(a) To develop the insulating films made of Ta2O5-doped polyimide utilizing sol-gel processes. 1-(b) To study the insulating thin films of polyimide (PI) and poly vinyl phenol (PVP), aimed at their match with the OTFT processing. The second kind is the conducting films for transparent electrodes of OTFT, which is made of conducting polymer, poly-(3,4-ethylenedioxythiophene /polystyrene sulphonate) (PEDOT: PSS), mixing with nano-sized silver wires. The above mentioned thin-film materials are integrated with a solution processed organic semiconductor 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) to fabricate OTFT devices. Their physical and electronic properties are characterized and investigated. The study of 1-(a) showed that the composite insulating films have thermal properties degrading and dielectric constant increasing with the content of Ta2O5 in the polyimide. The OTFT incorporating the films showed that the carrier mobility increased with the dielectric constant of the films. Furthermore, the degree of imidization of the composite films is affected by the amount of Ta2O5 added, and consequently, influences the leakage current densities of the films. In the study of 1-(b), the surface energies of PI and PVP films are found critical to the qualities of TES-ADT films formed on them as well as the electronic stability of the fabricated OTFT. Furthermore, it was verified that the thithography applied on organic semiconductor layer could reduce parasitic leakage current and increase current on/off ratio. The OTFT based on spin-cast TES-ADT films grown on the low-surface-energy PI dielectric exhibited enhanced electrical performance with a carrier mobility as high as 0.43 cm2/Vs and a current on/off ratio of 106. At last, the study of the silver wires/PEDOT: PSS composite film shows that the transparent conductive electrodes have a low sheet resistance less than 140 Ω/sq and a transmittance as high as 70 % in the visible region. For the composite film with 0.1 wt% of AgNWs, the work function is 5.0 eV and the corresponding contact resistance is as low as 2.7 × 104 Ω•cm. The resulting OTFT device utilizing TES-ADT as active layer showed a high electrical performance with carrier mobility 0.21 cm2/Vs. | en_US |
dc.language.iso | zh_TW | en_US |
dc.subject | 有机薄膜电晶体 | zh_TW |
dc.subject | 介电材料 | zh_TW |
dc.subject | 透明电极 | zh_TW |
dc.subject | organic thin film transistors | en_US |
dc.subject | insulator | en_US |
dc.subject | transparent electrode | en_US |
dc.title | 应用于有机薄膜电晶体的闸极绝缘层与透明电极之研究 | zh_TW |
dc.title | The Study of Gate Insulating Layer and Transparent Electrode for the Application in Organic Thin Film Transistors | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 材料科学与工程学系所 | zh_TW |
显示于类别: | Thesis |