AN IMPROVED MO/N-GAAS CONTACT BY INTERPOSITION OF A THIN PD LAYER

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DC Field	Value	Language
dc.contributor.author	NEE, CY	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHENG, TF	en_US
dc.contributor.author	HUANG, TS	en_US
dc.date.accessioned	2014-12-08T15:05:58Z	-
dc.date.available	2014-12-08T15:05:58Z	-
dc.date.issued	1988-06-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.728	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4516	-
dc.language.iso	en_US	en_US
dc.title	AN IMPROVED MO/N-GAAS CONTACT BY INTERPOSITION OF A THIN PD LAYER	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.728	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	9	en_US
dc.citation.issue	6	en_US
dc.citation.spage	315	en_US
dc.citation.epage	316	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1988N482900016	-
dc.citation.woscount	2	-
Appears in Collections:	Articles

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