標題: 使用APSYS分析及優化薄膜非晶矽太陽能電池
Analysis and Optimization of Thin Film a-Si Solar Cell Using APSYS Simulation
作者: 邱宗熙
Chiu, Tsung-Hsi
郭浩中
鄭裕庭
Kuo, Hao-Chung
Cheng, Yu-Ting
電機學院電子與光電學程
關鍵字: 非晶矽;太陽能電池;能態密度;薄膜非晶矽;模擬軟體;模型;a-Si;solar cell;DOS;a-Si thin film;APSYS;model
公開日期: 2010
摘要: 薄膜非晶矽太陽能電池的結構及能態比起矽晶圓太陽能電池要來的複雜,因此在製程上非常的耗時,如果要優化它們會是一個龐大的工程。我們利用APSYS模擬軟體來建立薄膜非晶矽太陽能電池模型,分析與優化它們並試圖與製程結合在一起,藉由此種方式可以有效的優先找出改良元件效率的因素或者是避免在製程上不需要的測試,以減少實際實驗所需的時間。 本篇論文的第一部分是在介紹APSYS模擬軟體如何運作及參數的認識和模型的建立,以及透過不同量測方式來建立模型的完整性。在第二部份的分析及討論會利用建立的模型去計算非晶矽,接著在針對非晶矽Density of state (DOS) 模型上變動參數如描述尾帶及缺陷能態分佈的一些主要參數等等,去看其對轉換效率的影響如何,並去解釋這些影響效率的因素,從這些數值計算和討論結果可以找到優化方法。 NDL建立出單一薄膜非晶矽太陽能電池效率可達9.6%、Jsc達17.1mA/cm2、Voc達0.91V及FF達0.67。因此在模型設計上,我們採用NDL非晶矽薄膜太陽能電池元件的結構,其結構參數包含PIN各層厚度及摻雜濃度,之後將利用非晶矽Density of state (DOS) 模型參數對照NDL建立出的元件特性,找出Density of state (DOS) 的參數如何影響元特性,歸納出來的法則,往後將有利於節省時間與方便預測元件在不同的製程條件下,是如何相對應於Density of state (DOS)模型參數的變化特性。
Since the structures and Density of state (DOS) of a-Si thin film solar cell are more complex than Monocrystalline-silicon solar cell, it is time-consuming in processing. For this reason, to optimize a-Si thin film solar cell in processing would be taken a long time. In order to solve this problem, we use the APSYS simulation program to set up models of a-Si thin film solar cell and combine with the process; moreover, we analyze and optimize these models in simulation results. It will save us much time in experiments. In the first session of my thesis, the mathematical modeling and solution techniques of APSYS had been introduced. Each parameter for setting up model was mentioned and I will list and introduce all of parameters to a-Si thin film solar cells’ models. In addition, measuring methods used to set up more complete models were also introduced. In the next session, in optimization, we modify various Densities of state (DOS) parameters with numerical calculation for each a-Si cell models and explain how they affect efficiency. After optimizing the major parameters of Densities of state (DOS) each other, we combine the individual parameters and construct high efficiency a-Si thin film solar cell. Our model is present high efficiency 9.1% in a-Si thin film solar cell.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079767509
http://hdl.handle.net/11536/46297
顯示於類別:畢業論文