標題: GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD
作者: CHENG, HC
WU, IC
CHEN, LJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 26-一月-1987
URI: http://dx.doi.org/10.1063/1.97652
http://hdl.handle.net/11536/4668
ISSN: 0003-6951
DOI: 10.1063/1.97652
期刊: APPLIED PHYSICS LETTERS
Volume: 50
Issue: 4
起始頁: 174
結束頁: 176
顯示於類別:期刊論文