GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHENG, HC	en_US
dc.contributor.author	WU, IC	en_US
dc.contributor.author	CHEN, LJ	en_US
dc.date.accessioned	2014-12-08T15:06:06Z	-
dc.date.available	2014-12-08T15:06:06Z	-
dc.date.issued	1987-01-26	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.97652	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4668	-
dc.language.iso	en_US	en_US
dc.title	GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.97652	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	50	en_US
dc.citation.issue	4	en_US
dc.citation.spage	174	en_US
dc.citation.epage	176	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1987F694200002	-
dc.citation.woscount	11	-
顯示於類別：	期刊論文