GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD

doi:10.1063/1.97652

標題:	GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD
作者:	CHENG, HC WU, IC CHEN, LJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	26-一月-1987
URI:	http://dx.doi.org/10.1063/1.97652 http://hdl.handle.net/11536/4668
ISSN:	0003-6951
DOI:	10.1063/1.97652
期刊:	APPLIED PHYSICS LETTERS
Volume:	50
Issue:	4
起始頁:	174
結束頁:	176
顯示於類別：	期刊論文