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dc.contributor.authorTSENG, HHen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:06:06Z-
dc.date.available2014-12-08T15:06:06Z-
dc.date.issued1987-01-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.338820en_US
dc.identifier.urihttp://hdl.handle.net/11536/4669-
dc.language.isoen_USen_US
dc.titleA SIMPLE TECHNIQUE FOR MEASURING THE INTERFACE-STATE DENSITY OF THE SCHOTTKY-BARRIER DIODES USING THE CURRENT-VOLTAGE CHARACTERISTICSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.338820en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume61en_US
dc.citation.issue1en_US
dc.citation.spage299en_US
dc.citation.epage304en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department工學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentCollege of Engineeringen_US
dc.identifier.wosnumberWOS:A1987F377400043-
dc.citation.woscount45-
Appears in Collections:Articles


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