A SIMPLE TECHNIQUE FOR MEASURING THE INTERFACE-STATE DENSITY OF THE SCHOTTKY-BARRIER DIODES USING THE CURRENT-VOLTAGE CHARACTERISTICS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	TSENG, HH	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:06:06Z	-
dc.date.available	2014-12-08T15:06:06Z	-
dc.date.issued	1987-01-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.338820	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4669	-
dc.language.iso	en_US	en_US
dc.title	A SIMPLE TECHNIQUE FOR MEASURING THE INTERFACE-STATE DENSITY OF THE SCHOTTKY-BARRIER DIODES USING THE CURRENT-VOLTAGE CHARACTERISTICS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.338820	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	61	en_US
dc.citation.issue	1	en_US
dc.citation.spage	299	en_US
dc.citation.epage	304	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	工學院	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	College of Engineering	en_US
dc.identifier.wosnumber	WOS:A1987F377400043	-
dc.citation.woscount	45	-
顯示於類別：	期刊論文