高靈敏度之堆疊式結構矽鍺奈米線於不同氧化條件下之氧化特性研究

Abstract

矽奈米線在生物感測上的應用在近幾年已被廣泛的研究及探討，且被視為最具潛力的元件之一。本實驗室團隊成功的製作出矽鍺奈米線，並證實了矽鍺奈米線亦具有與矽奈米線相同的感測特性。本論文中，利用半導體製程技術製作出不同厚度的堆疊式結構和不同矽鍺濃度比的P型矽鍺奈米線於spacer上。接著進行氧化處理，使鍺從矽鍺奈米線中析出於表面，使原來為均質的矽鍺奈米線變成非均質的矽鍺奈米線，再藉由改變氧化時所通入氧氣及氮氣的比例以及氧化時間。最後，找出最佳的矽鍺濃度比、氮氧比以及氧化時間，使矽鍺奈米線表面與欲感測物產生最好鍵結，以提高靈敏度。

Recently, silicon nanowires (SiNWs) have been extensively studied and discussed in bio-sensor applications, and considered as one of the most promising candidate for sensor devices. We successfully fabricated silicon germanium nanowires (SiGeNWs), and confirmed that it has the same characteristics as SiNWs. In this thesis, the P-type SiGeNWs on the sidewall spacer be fabricated by stacked structure of different thickness and different silicon germanium concentration. Followed by oxidation, we change the oxygen/nitrogen ratio and oxidation time, then observed the Ge will condensation on the surface from SiGeNWs, so that the homogeneous SiGeNWs will become a non-homogeneous SiGeNWs. Finally, find the best concentration ratio of silicon germanium, the nitrogen/oxygen ratio, and the oxidation time, so that the surface of SiGeNWs with some we want to sense to produce the best bonding to improve sensitivity.